ION IMPLANTATION APPARATUS

An ion implantation apparatus includes an ion source that is capable of generating a calibration ion beam including a multiply charged ion which has a known energy corresponding to an extraction voltage, an upstream beamline that includes amass analyzing magnet and a high energy multistage linear ac...

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Bibliographic Details
Main Authors Fujita, Katsushi, Sasaki, Haruka
Format Patent
LanguageEnglish
Published 15.11.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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Summary:An ion implantation apparatus includes an ion source that is capable of generating a calibration ion beam including a multiply charged ion which has a known energy corresponding to an extraction voltage, an upstream beamline that includes amass analyzing magnet and a high energy multistage linear acceleration unit, an energy analyzing magnet, a beam energy measuring device that measures an energy of the calibration ion beam downstream of the energy analyzing magnet, and a calibration sequence unit that produces an energy calibration table representing a correspondence relation between the known energy and the energy of the calibration ion beam measured by the beam energy measuring device. An upstream beamline pressure is adjusted to a first pressure during an ion implantation process, and is adjusted to a second pressure higher than the first pressure while the energy calibration table is produced.
Bibliography:Application Number: US201815908614