REFRACTORY METAL ALLOY TARGETS FOR PHYSICAL VAPOR DEPOSITION
Refractory metal alloy targets for reducing particles in physical vapor deposition processing and refractory metal-based layer for integrated circuit applications (for example, crystallization barrier layers in non-volatile memory devices) are disclosed herein. An exemplary method for reducing parti...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
15.11.2018
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Subjects | |
Online Access | Get full text |
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Summary: | Refractory metal alloy targets for reducing particles in physical vapor deposition processing and refractory metal-based layer for integrated circuit applications (for example, crystallization barrier layers in non-volatile memory devices) are disclosed herein. An exemplary method for reducing particles in a PVD chamber include positioning a refractory metal alloy target in the PVD chamber, positioning a substrate in the PVD chamber a distance from the refractory metal alloy target, and sputtering material from the refractory metal alloy target to form a refractory metal-based layer over the substrate. The refractory metal alloy target includes a refractory metal (for example, tungsten or molybdenum) alloyed with a body-centered cubic (BCC) metal (for example, niobium, tantalum, vanadium, or a combination thereof). The BCC metal has a Young's modulus lower than a Young's modulus of the refractory metal. |
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Bibliography: | Application Number: US201515777502 |