LOW TEMPERATURE P-I-N HYBRID MESOPOROUS OPTOELECTRONIC DEVICE

Optoelectronic devices having an improved architecture are disclosed, such as p-i-n hybrid solar cells. These solar cells are characterized by including an insulating mesoporous scaffold in between the hole transportation layer and the photoactive layer, in such a way that the photoactive layer infi...

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Bibliographic Details
Main Authors Ramirez Zora, Daniel Estiben, Jaramillo Isaza, Franklin, Montoya Arango, Juan Felipe
Format Patent
LanguageEnglish
Published 08.11.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Optoelectronic devices having an improved architecture are disclosed, such as p-i-n hybrid solar cells. These solar cells are characterized by including an insulating mesoporous scaffold in between the hole transportation layer and the photoactive layer, in such a way that the photoactive layer infiltrates the insulating mesoporous scaffold and contacts the hole transportation layer. The infiltration of the photoactive layer in the mesoporous scaffold improves the performance of the hole transportation layer and increases the photovoltaic performance of the solar cell. Solar cells, according to the present invention are manufactured in their entirety below 150° C. and present advantages in terms of cost and ease of manufacture, performance, and energy efficiency, stability over time and reproducibility.
Bibliography:Application Number: US201815972204