VERTICAL DIVISION OF THREE-DIMENSIONAL MEMORY DEVICE

• Main Authors: Bell, Scott A, Xue, Lei, Sugino, Rinji
• Format: Patent
• Language: English
• Published: 08.11.2018
• Subjects: ELECTRICITY; INFORMATION STORAGE; PHYSICS; STATIC STORES

A method of forming a vertical non-volatile (NV) memory device such as 3-D NAND flash memory includes forming a vertical NV memory cell string within an opening disposed in a stack of alternating layers of a first layer and a second layer over a substrate, and dividing the vertical NV memory cell st...