Power Semiconductor Devices and a Method for Forming a Power Semiconductor Device

A power semiconductor device includes a power transistor arranged in a power device region of a semiconductor substrate. The power semiconductor device further includes a first circuit arranged in a first circuit region of the semiconductor substrate. The power semiconductor device further includes...

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Bibliographic Details
Main Authors Mahler, Joachim, Kolmeder, Guenther
Format Patent
LanguageEnglish
Published 01.11.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A power semiconductor device includes a power transistor arranged in a power device region of a semiconductor substrate. The power semiconductor device further includes a first circuit arranged in a first circuit region of the semiconductor substrate. The power semiconductor device further includes a second circuit arranged in a second circuit region of the semiconductor substrate. The first circuit region is arranged at a first edge of the semiconductor substrate. The second circuit region is arranged at a second edge of the semiconductor substrate. The power device region is arranged between the first circuit region and the second circuit region.
Bibliography:Application Number: US201815965230