SEMICONDUCTOR MEMORY APPARATUS AND DATA INPUT/OUTPUT METHOD THEREOF

A semiconductor memory apparatus may include a write data polarity change unit and a read data polarity change unit. The write data polarity change unit may invert a first data based on a write signal and a first bank address signal, and generate a write polarity change data. The read data polarity...

Full description

Saved in:
Bibliographic Details
Main Author KU, Kie Bong
Format Patent
LanguageEnglish
Published 01.11.2018
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:A semiconductor memory apparatus may include a write data polarity change unit and a read data polarity change unit. The write data polarity change unit may invert a first data based on a write signal and a first bank address signal, and generate a write polarity change data. The read data polarity change unit may invert data outputted from a memory bank based on a read signal and the first bank address signal, and generate a read polarity change data.
Bibliography:Application Number: US201816020466