POLYCRYSTALLINE SILICON INGOT

The present disclosure provides a polycrystalline silicon ingot. The polycrystalline silicon ingot has a vertical direction and includes a nucleation promotion layer located at a bottom of the polycrystalline silicon ingot, and silicon grains grown along the vertical direction, wherein the silicon g...

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Bibliographic Details
Main Authors Yang, Yu-Min, Yu, Wen-Huai, Hsu, Sung-Lin, Chou, Hung-Sheng, Yang, Cheng-Jui, Hsu, Wen-Ching
Format Patent
LanguageEnglish
Published 01.11.2018
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS THEREOF
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:The present disclosure provides a polycrystalline silicon ingot. The polycrystalline silicon ingot has a vertical direction and includes a nucleation promotion layer located at a bottom of the polycrystalline silicon ingot, and silicon grains grown along the vertical direction, wherein the silicon grains include at least three crystal directions. The coefficient of variation of grain area in a section above the nucleation promotion layer of the polycrystalline silicon ingot increases along the vertical direction.
Bibliography:Application Number: US201816024927