ADAPTIVE MODULATION SCHEME OF MOSFET DRIVER KEY PARAMETERS FOR IMPROVED VOLTAGE REGULATOR EFFICIENCY AND SYSTEM RELIABILITY

Systems and methods for adaptive modulation of MOSFET driver key parameters for improved voltage regulator efficiency and reliability in a voltage regulator may include a power stage. The power stage may include a high side switch including a high side gate, a peak voltage detection circuit, and a h...

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Bibliographic Details
Main Authors Johnson, Ralph H, Zhang, Kejiu, Luo, Shiguo
Format Patent
LanguageEnglish
Published 25.10.2018
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Summary:Systems and methods for adaptive modulation of MOSFET driver key parameters for improved voltage regulator efficiency and reliability in a voltage regulator may include a power stage. The power stage may include a high side switch including a high side gate, a peak voltage detection circuit, and a high side driver strength modulator circuit. The high side driver strength modulator circuit may determine a high side driver strength level. The high side driver strength modulator circuit may also connect a subset of the set of high side gate drivers to the high side gate based on the high side driver strength level. The high side driver strength modulator circuit may also disconnect a remaining subset of the set of high side gate drivers from the high side gate.
Bibliography:Application Number: US201715491561