STRAINED GATE SEMICONDUCTOR DEVICE WITH DOPED INTERLAYER DIELECTRIC MATERIAL

A semiconductor device including a gate stack over a substrate. The semiconductor device further includes an interlayer dielectric (ILD) at least partially enclosing the gate stack. The ILD includes a first portion doped with an oxygen-containing material, a second portion doped with a large species...

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Bibliographic Details
Main Authors LIN, Kun-Tzu, CHANG, Lan-Fang, WU, Cheng-Ta, JANGJIAN, Shiu-Ko, WU, Chii-Ming
Format Patent
LanguageEnglish
Published 25.10.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device including a gate stack over a substrate. The semiconductor device further includes an interlayer dielectric (ILD) at least partially enclosing the gate stack. The ILD includes a first portion doped with an oxygen-containing material, a second portion doped with a large species material, and a third portion being undoped by the oxygen-containing material and the large species material.
Bibliography:Application Number: US201816022686