Chalcogen Back Surface Field Layer

Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conduc...

Full description

Saved in:
Bibliographic Details
Main Authors Antunez, Priscilla D, Haight, Richard A, Mankad, Ravin, Singh, Saurabh, Todorov, Teodor K, Ek, Bruce A
Format Patent
LanguageEnglish
Published 11.10.2018
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.
Bibliography:Application Number: US201816009098