METHOD FOR PROCESSING A SEMICONDUCTOR WORKPIECE AND SEMICONDUCTOR DEVICE

• Main Author: Karmous, Alim
• Format: Patent
• Language: English
• Published: 27.09.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for processing a semiconductor workpiece, including: forming a trench structure in a first region of a semiconductor workpiece, extending from a surface of the semiconductor workpiece to a first depth, forming at least one recess in a second region of the semiconductor workpiece laterally next to the first region, the recess extending from the surface of the semiconductor workpiece into the semiconductor workpiece to a second depth less than the first depth; forming a material layer over the semiconductor workpiece, the material layer filling the trench structure and recess and covering the surface of the semiconductor workpiece in the first region and in the second region; and planarizing the semiconductor workpiece to partially remove the material layer in the first region and in the second region, wherein the material layer remains in the trench structure and in the at least one recess.