FORMING BOTTOM ISOLATION LAYER FOR NANOSHEET TECHNOLOGY
A method of forming a semiconductor structure includes forming a multi-layer structure. The multi-layer structure has a substrate and two or more nanosheet layers formed above the substrate. The method also includes forming a bottom isolation layer between the substrate and the two or more nanosheet...
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| Main Authors | , |
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| Format | Patent |
| Language | English |
| Published |
13.09.2018
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A method of forming a semiconductor structure includes forming a multi-layer structure. The multi-layer structure has a substrate and two or more nanosheet layers formed above the substrate. The method also includes forming a bottom isolation layer between the substrate and the two or more nanosheet layers. The method further includes performing a fin reveal in the multi-layer structure after formation of the bottom isolation layer to form a fin. The two or more nanosheet layers provide a channel stack for a nanosheet field-effect transistor. |
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| AbstractList | A method of forming a semiconductor structure includes forming a multi-layer structure. The multi-layer structure has a substrate and two or more nanosheet layers formed above the substrate. The method also includes forming a bottom isolation layer between the substrate and the two or more nanosheet layers. The method further includes performing a fin reveal in the multi-layer structure after formation of the bottom isolation layer to form a fin. The two or more nanosheet layers provide a channel stack for a nanosheet field-effect transistor. |
| Author | Zhang, Chen Yeung, Chun W |
| Author_xml | – fullname: Zhang, Chen – fullname: Yeung, Chun W |
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| Snippet | A method of forming a semiconductor structure includes forming a multi-layer structure. The multi-layer structure has a substrate and two or more nanosheet... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | FORMING BOTTOM ISOLATION LAYER FOR NANOSHEET TECHNOLOGY |
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