CAPACITOR FOR SEMICONDUCTOR MEMORY ELEMENT AND METHOD FOR MANUFACTURING THE SAME

A capacitor for a semiconductor memory element includes a lower electrode, a dielectric layer disposed on the lower electrode and including titanium oxide, and an upper electrode disposed on the dielectric layer. The lower electrode includes a first metal and a second metal, the first metal includin...

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Main Authors CHO, Cheol Jin, KIM, Sangtae, KANG, Chong-Yun, PYEON, Jung Joon, KIM, Seong Keun, BAEK, Seung-Hyub, KIM, Jin-Sang, CHOI, Ji-Won, JEONG, Doo Seok
Format Patent
LanguageEnglish
Published 30.08.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A capacitor for a semiconductor memory element includes a lower electrode, a dielectric layer disposed on the lower electrode and including titanium oxide, and an upper electrode disposed on the dielectric layer. The lower electrode includes a first metal and a second metal, the first metal including at least one selected from the group consisting of platinum (Pt), osmium (Os), rhodium (Rh) and palladium (Pd), the second metal including at least one selected from the group consisting of ruthenium (Ru) and iridium (Ir).
Bibliography:Application Number: US201715648770