METHODS FOR ASSESSING SEMICONDUCTOR STRUCTURES

Methods for assessing the quality of a semiconductor structure having a charge trapping layer to, for example, determine if the structure is suitable for use as a radiofrequency device are disclosed. Embodiments of the assessing method may involve measuring an electrostatic parameter at an initial s...

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Bibliographic Details
Main Authors Wang, Gang, Libbert, Jeffrey L, Rapoport, Igor, Kommu, Srikanth, Peidous, Igor
Format Patent
LanguageEnglish
Published 16.08.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods for assessing the quality of a semiconductor structure having a charge trapping layer to, for example, determine if the structure is suitable for use as a radiofrequency device are disclosed. Embodiments of the assessing method may involve measuring an electrostatic parameter at an initial state and at an excited state in which charge carriers are generated.
Bibliography:Application Number: US201815893055