SELF-ALIGNED VIA FORMING TO CONDUCTIVE LINE AND RELATED WIRING STRUCTURE

A method of forming a via and a wiring structure formed are disclosed. The method may include forming a conductive line in a first dielectric layer; forming a hard mask adjacent to the conductive line after the conductive line forming; forming a second dielectric layer over the hard mask; and formin...

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Bibliographic Details
Main Authors Anderson, Brent A, Nowak, Edward J
Format Patent
LanguageEnglish
Published 26.07.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming a via and a wiring structure formed are disclosed. The method may include forming a conductive line in a first dielectric layer; forming a hard mask adjacent to the conductive line after the conductive line forming; forming a second dielectric layer over the hard mask; and forming a via opening to the conductive line in the second dielectric layer. The via opening lands at least partially on the hard mask to self-align the via opening to the conductive line. A via may be formed by filling the via opening with a conductor.
Bibliography:Application Number: US201815933449