TRANSISTOR STRUCTURE WITH VARIED GATE CROSS-SECTIONAL AREA

• Main Authors: Schepis, Dominic J, Kerber, Pranita, Reznicek, Alexander, Ouyang, Qiqing C
• Format: Patent
• Language: English
• Published: 05.07.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Aspects of the present disclosure include finFET structures with varied cross-sectional areas and methods of forming the same. Methods according to the present disclosure can include, e.g., forming a structure including: a semiconductor fin positioned on a substrate, wherein the semiconductor fin includes: a gate area, and a terminal area laterally distal to the gate area, a sacrificial gate positioned on the gate area of the semiconductor fin, and an insulator positioned on the terminal area of the semiconductor fin; removing the sacrificial gate to expose the gate area of the semiconductor fin; increasing or reducing a cross-sectional area of the gate area of the semiconductor fin; and forming a transistor gate on the gate area of the semiconductor fin.