SEMICONDUCTOR DEVICES WITH CAVITIES AND METHODS FOR FABRICATING SEMICONDUCTOR DEVICES WITH CAVITIES

Semiconductor devices with enclosed cavities and methods for fabricating semiconductor devices with enclosed cavities are provided. In an embodiment, a method for fabricating a semiconductor device with a cavity includes providing a substrate terminating at an uppermost surface and forming a sacrifi...

Full description

Saved in:
Bibliographic Details
Main Authors Kumar, Rakesh, Chakravarty, Siddharth, Yelehanka, Pradeep
Format Patent
LanguageEnglish
Published 21.06.2018
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Semiconductor devices with enclosed cavities and methods for fabricating semiconductor devices with enclosed cavities are provided. In an embodiment, a method for fabricating a semiconductor device with a cavity includes providing a substrate terminating at an uppermost surface and forming a sacrificial structure over the uppermost substrate of the substrate. The method includes forming a device structure overlying a lower portion of the sacrificial structure, overlying the uppermost surface of the substrate, and underlying an upper portion of the sacrificial structure. The method also includes depositing a permeable layer over the sacrificial structure, the device structure and the substrate. Further, the method includes etching the sacrificial structure through the permeable layer to form the cavity, wherein the cavity has an outer surface completely bounded by the substrate, the device structure, and the permeable layer.
Bibliography:Application Number: US201815899785