SEMICONDUCTOR DEVICE ISOLATION WITH RESURF LAYER ARRANGEMENT

A device includes a semiconductor substrate, a doped isolation barrier disposed in the semiconductor substrate, a body region disposed in the semiconductor substrate within the doped isolation barrier and in which a channel is formed during operation, an isolation contact disposed at the semiconduct...

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Bibliographic Details
Main Authors Lin, Xin, Zuo, Jiang-Kai, Yang, Hongning, Zhu, Ronghua
Format Patent
LanguageEnglish
Published 10.05.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A device includes a semiconductor substrate, a doped isolation barrier disposed in the semiconductor substrate, a body region disposed in the semiconductor substrate within the doped isolation barrier and in which a channel is formed during operation, an isolation contact disposed at the semiconductor substrate and to which a voltage is applied during operation, and a plurality of reduced surface field (RESURF) layers disposed in the semiconductor substrate, the plurality of reduced surface field (RESURF) layers being arranged in a stack between the body region and the isolation contact.
Bibliography:Application Number: US201615348768