High Voltage Termination Structure of a Power Semiconductor Device

• Main Authors: Pfaffenlehner, Manfred, Wolter, Frank, Moser, Andreas, Griebl, Erich
• Format: Patent
• Language: English
• Published: 26.04.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A power semiconductor device includes a semiconductor body coupled to first and second load terminals and including a drift region with dopants of a first conductivity type. An active region has at least one power cell extending at least partially into the semiconductor body, is electrically connected with the first load terminal and includes a part of the drift region. Each power cell includes a section of the drift region and is configured to conduct a load current between the terminals and to block a blocking voltage applied between the terminals. A chip edge laterally terminates the semiconductor body. A non-active termination structure arranged in between the chip edge and active region includes an ohmic layer. The ohmic layer is arranged above a surface of the semiconductor body, forms an ohmic connection between electrical potentials of the first and second load terminals, and is laterally structured along the ohmic connection.