IC STRUCTURE INCLUDING TSV HAVING METAL RESISTANT TO HIGH TEMPERATURES AND METHOD OF FORMING SAME

An integrated circuit (IC) structure including: a first layer including a first plurality of active devices in a first semiconductor layer over a substrate; a first wiring layer over the first layer; a second layer including a second plurality of active devices within a second semiconductor layer ov...

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Bibliographic Details
Main Authors Melville, Ian D. W, Farooq, Mukta G
Format Patent
LanguageEnglish
Published 19.04.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An integrated circuit (IC) structure including: a first layer including a first plurality of active devices in a first semiconductor layer over a substrate; a first wiring layer over the first layer; a second layer including a second plurality of active devices within a second semiconductor layer over the first wiring layer; and a second wiring layer over the second layer, wherein the first wiring layer and the second wiring layer each including a first metal resistant to high temperature.
Bibliography:Application Number: US201615292721