INTEGRATED CIRCUIT STRUCTURE HAVING DEEP TRENCH CAPACITOR AND THROUGH-SILICON VIA AND METHOD OF FORMING SAME

• Main Authors: Fitzsimmons, John A, Stamper, Anthony K, Farooq, Mukta G
• Format: Patent
• Language: English
• Published: 19.04.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

One aspect of the disclosure relates to a method of forming an integrated circuit structure. The method may include providing a substrate having a front side and a back side, the substrate including a deep trench (DT) capacitor within the substrate extending toward the back side of the substrate; etching the substrate on the back side of the substrate to remove at least a portion of the substrate on the back side; forming a first dielectric layer covering the back side of the substrate and extending away from the front side of the substrate; and forming a through silicon via (TSV) adjacent to the DT capacitor, the TSV extending through the first dielectric layer toward the front side of the substrate.