SEMICONDUCTOR DEVICE

To provide a semiconductor device having improved reliability by preventing, in a split-gate MONOS memory comprised of a fin type transistor, unbalanced injection distribution of electrons into a charge accumulation film due to the shape of the fin. A memory gate electrode configuring a memory cell...

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Bibliographic Details
Main Authors TSUKUDA Eiji, SONODA Kenichiro
Format Patent
LanguageEnglish
Published 05.04.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide a semiconductor device having improved reliability by preventing, in a split-gate MONOS memory comprised of a fin type transistor, unbalanced injection distribution of electrons into a charge accumulation film due to the shape of the fin. A memory gate electrode configuring a memory cell is formed over a fin. The impurity concentration of a portion of this memory gate electrode contiguous to an ONO film that covers the upper surface of the fin is made lower than that of a portion of the memory gate electrode contiguous to an ONO film that covers the side surface of the fin.
Bibliography:Application Number: US201715669595