MANUFACTURING METHOD OF NICKEL WIRING

There is provided a method for manufacturing Ni wiring. The method includes forming an Ni film on a surface of a substrate having a recess formed thereon by CVD or ALD by using an Ni compound as a film forming material and NH3gas and H2 gas as reduction gases to partially fill the recess. The method...

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Bibliographic Details
Main Authors KAWASAKI Hiroaki, NAGAI Hiroyuki, MATSUMOTO Takashi, IFUKU Ryota
Format Patent
LanguageEnglish
Published 29.03.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:There is provided a method for manufacturing Ni wiring. The method includes forming an Ni film on a surface of a substrate having a recess formed thereon by CVD or ALD by using an Ni compound as a film forming material and NH3gas and H2 gas as reduction gases to partially fill the recess. The method further includes annealing the substrate to make the Ni film on the surface of the substrate and on a side surface of the recess reflow into the recess.
Bibliography:Application Number: US201715714951