MANUFACTURING METHOD OF NICKEL WIRING
There is provided a method for manufacturing Ni wiring. The method includes forming an Ni film on a surface of a substrate having a recess formed thereon by CVD or ALD by using an Ni compound as a film forming material and NH3gas and H2 gas as reduction gases to partially fill the recess. The method...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
29.03.2018
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Subjects | |
Online Access | Get full text |
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Summary: | There is provided a method for manufacturing Ni wiring. The method includes forming an Ni film on a surface of a substrate having a recess formed thereon by CVD or ALD by using an Ni compound as a film forming material and NH3gas and H2 gas as reduction gases to partially fill the recess. The method further includes annealing the substrate to make the Ni film on the surface of the substrate and on a side surface of the recess reflow into the recess. |
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Bibliography: | Application Number: US201715714951 |