ELECTROSTATIC DISCHARGE PROTECTION DEVICE

• Main Authors: PARK Woo Suk, HAN Jung Woo, KIM Jong Min
• Format: Patent
• Language: English
• Published: 22.03.2018
• Subjects: BASIC ELECTRIC ELEMENTS; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS; GENERATION; SEMICONDUCTOR DEVICES

An ESD protection device includes a semiconductor substrate of p-type conductivity, an epitaxial layer of p-type conductivity, a buried layer of n-type conductivity, device isolation layers, a first well of n-type conductivity, an emitter formed by implanting p-type impurities into an upper portion of the first well, a second well of p-type conductivity, a collector formed by implanting p-type impurities into an upper portion of the second well, a first P-body region interposed between the second well and the collector, a third well of n-type conductivity, a base formed by implanting n-type impurities into an upper surface portion of the third well, and a first deep well of n-type conductivity, interposed between the third well and the buried layer.