ELECTROSTATIC DISCHARGE PROTECTION DEVICE

An ESD protection device includes a semiconductor substrate of p-type conductivity, an epitaxial layer of p-type conductivity, a buried layer of n-type conductivity, device isolation layers, a first well of n-type conductivity, an emitter formed by implanting p-type impurities into an upper portion...

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Bibliographic Details
Main Authors PARK Woo Suk, HAN Jung Woo, KIM Jong Min
Format Patent
LanguageEnglish
Published 22.03.2018
Subjects
BASIC ELECTRIC ELEMENTS
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
GENERATION
SEMICONDUCTOR DEVICES
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Summary:An ESD protection device includes a semiconductor substrate of p-type conductivity, an epitaxial layer of p-type conductivity, a buried layer of n-type conductivity, device isolation layers, a first well of n-type conductivity, an emitter formed by implanting p-type impurities into an upper portion of the first well, a second well of p-type conductivity, a collector formed by implanting p-type impurities into an upper portion of the second well, a first P-body region interposed between the second well and the collector, a third well of n-type conductivity, a base formed by implanting n-type impurities into an upper surface portion of the third well, and a first deep well of n-type conductivity, interposed between the third well and the buried layer.
Bibliography:Application Number: US201715707563