SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THE SAME

• Main Authors: CHOU Ying-Kai, CHEN Li-Che, LIU Hsing-Chao
• Format: Patent
• Language: English
• Published: 15.03.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device and a method for forming the same are provided. The method includes forming a patterned mask on a substrate, wherein the patterned mask includes a pad oxide layer and a silicon nitride layer over the pad oxide layer. The method also includes forming a trench in the substrate by performing a first etching process on the substrate through an opening of the patterned mask and forming a dielectric material layer in the trench, in the opening, and on the patterned mask. The method further includes performing a planarization process to remove the dielectric material layer outside of the trench, and performing a heat treatment process to form an oxidized portion at the interface of the pad oxide layer and the substrate and adjacent to the dielectric material layer.