Self Aligned Silicon Carbide Contact Formation Using Protective Layer

• Main Authors: Esteve Romain, Joshi Ravi Keshav, Kahn Markus, Pekoll Kurt, Unegg Gerald, Steinbrenner Juergen
• Format: Patent
• Language: English
• Published: 15.03.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A silicon-carbide substrate that includes: a doped silicon-carbide contact region directly adjoining a main surface of the substrate, and a dielectric layer covering the main surface is provided. A protective layer is formed on the silicon-carbide substrate such that the protective layer covers the dielectric layer and exposes the doped silicon-carbide contact region at the main surface. A metal layer that conforms to the protective layer and directly contacts the exposed doped silicon-carbide contact region is deposited. A first rapid thermal anneal process is performed. A thermal budget of the first rapid thermal anneal process is selected to cause the metal layer to form a silicide with the doped silicon-carbide contact region during the first rapid thermal anneal process without causing the metal layer to form a silicide with the protective layer during the first rapid thermal anneal process.