SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device, including a semiconductor layer of a first conductivity type, and a parallel pn layer formed on a surface of the semiconductor layer. The parallel pn layer includes a plurality of first semiconductor regions of the first conductivity type, and a plurality of second semiconduc...

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Bibliographic Details
Main Authors TATEMICHI Shuhei, TAKENOIRI Shunji
Format Patent
LanguageEnglish
Published 01.03.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device, including a semiconductor layer of a first conductivity type, and a parallel pn layer formed on a surface of the semiconductor layer. The parallel pn layer includes a plurality of first semiconductor regions of the first conductivity type, and a plurality of second semiconductor regions of a second conductivity type. The first and second semiconductor regions are alternatingly arranged in a direction parallel to the surface of the semiconductor layer. Each second semiconductor region has at least one first region that is a region having a group 18 element introduced therein.
Bibliography:Application Number: US201715637194