Barrier Layer Formation Using Thermal Processing

A method of fabricating a semiconductor device includes forming a barrier layer over a surface of a semiconductor substrate. A treated barrier layer is formed by subjecting an exposed surface of the barrier layer to a surface treatment process. The surface treatment process includes treating the sur...

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Bibliographic Details
Main Authors Joshi Ravi Keshav, Wang Kae-Horng, Willkofer Stefan
Format Patent
LanguageEnglish
Published 01.03.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a semiconductor device includes forming a barrier layer over a surface of a semiconductor substrate. A treated barrier layer is formed by subjecting an exposed surface of the barrier layer to a surface treatment process. The surface treatment process includes treating the surface with a reactive material. A material layer is formed over the treated barrier layer. The material layer comprises a metal.
Bibliography:Application Number: US201615249067