Magnetic Memory Devices and Methods for Manufacturing the Same

A magnetic memory device is provided including a magnetic tunnel junction pattern having a free pattern, a reference pattern, and a tunnel barrier pattern between the free pattern and the reference pattern. The free pattern includes a first sub-free pattern, a second sub-free pattern, and a third su...

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Bibliographic Details
Main Authors Kim Juhyun, KIM Jae Hoon
Format Patent
LanguageEnglish
Published 08.02.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A magnetic memory device is provided including a magnetic tunnel junction pattern having a free pattern, a reference pattern, and a tunnel barrier pattern between the free pattern and the reference pattern. The free pattern includes a first sub-free pattern, a second sub-free pattern, and a third sub-free pattern. The first sub-free pattern is between the tunnel barrier pattern and the third sub-free pattern, and the second sub-free pattern is between the first sub-free pattern and the third sub-free pattern. The second sub-free pattern includes nickel-cobalt-iron-boron (NiCoFeB), and the third sub-free pattern includes nickel-iron-boron (NiFeB). Related methods of fabrication are also provided.
Bibliography:Application Number: US201715471241