GAS SUPPLY APPARATUS AND GAS SUPPLY METHOD

• Main Authors: OKURA Shigeyuki, NUNOSHIGE Yu
• Format: Patent
• Language: English
• Published: 08.02.2018
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A gas supply apparatus for forming a film by supplying a source gas, a substitution gas, and a reaction gas to a substrate in a processing chamber includes a source gas flow passage; a reaction gas flow passage; a first and second carrier gas flow passages connected to the source gas flow passage and the reaction gas flow passage; a substitution gas flow passage configured to supply the substitution gas into the processing chamber through a supply control device; a gas storage part installed in the substitution gas flow passage, and configured to store the substitution gas; a valve installed in the substitution gas flow passage, and installed in a downstream side of the gas storage part; and a control unit configured to control opening/closing of the valve such that the substitution gas is stored in the gas storage part to increase an internal pressure of the gas storage part.