PREVENTING BRIDGE FORMATION BETWEEN REPLACEMENT GATE AND SOURCE/DRAIN REGION THROUGH STI STRUCTURE

A method includes forming at least one fin above a semiconductor substrate. An isolation structure is formed adjacent the fin. A liner layer is formed above the isolation structure adjacent an interface between the fin and the isolation structure. The liner layer includes a material different than t...

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Bibliographic Details
Main Authors Huang Haigou, Wu Xusheng, Dai Xintuo
Format Patent
LanguageEnglish
Published 01.02.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method includes forming at least one fin above a semiconductor substrate. An isolation structure is formed adjacent the fin. A liner layer is formed above the isolation structure adjacent an interface between the fin and the isolation structure. The liner layer includes a material different than the isolation structure. A sacrificial gate structure is formed above a portion of the fin and includes a sacrificial gate insulation layer and a sacrificial gate structure. The sacrificial gate structure is removed. The sacrificial gate insulation layer is removed selectively to the liner layer. A replacement gate structure is formed above a portion of the fin in a cavity defined by removing the sacrificial gate structure.
Bibliography:Application Number: US201615219370