PREVENTING BRIDGE FORMATION BETWEEN REPLACEMENT GATE AND SOURCE/DRAIN REGION THROUGH STI STRUCTURE
A method includes forming at least one fin above a semiconductor substrate. An isolation structure is formed adjacent the fin. A liner layer is formed above the isolation structure adjacent an interface between the fin and the isolation structure. The liner layer includes a material different than t...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
01.02.2018
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Subjects | |
Online Access | Get full text |
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Summary: | A method includes forming at least one fin above a semiconductor substrate. An isolation structure is formed adjacent the fin. A liner layer is formed above the isolation structure adjacent an interface between the fin and the isolation structure. The liner layer includes a material different than the isolation structure. A sacrificial gate structure is formed above a portion of the fin and includes a sacrificial gate insulation layer and a sacrificial gate structure. The sacrificial gate structure is removed. The sacrificial gate insulation layer is removed selectively to the liner layer. A replacement gate structure is formed above a portion of the fin in a cavity defined by removing the sacrificial gate structure. |
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Bibliography: | Application Number: US201615219370 |