SEMICONDUCTOR DEVICES, VIA STRUCTURES AND METHODS FOR FORMING THE SAME

A semiconductor device includes a via structure penetrating through a substrate, a top metal layer and an electronic component over the via structure, and a bottom metal layer and another electronic component below the via structure. The via structure includes a through hole penetrating from a first...

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Bibliographic Details
Main Authors CHEN Li-Che, HEBERT Francois
Format Patent
LanguageEnglish
Published 11.01.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a via structure penetrating through a substrate, a top metal layer and an electronic component over the via structure, and a bottom metal layer and another electronic component below the via structure. The via structure includes a through hole penetrating from a first surface to an opposite second surface of a substrate, a filling insulating layer within the through hole, a first conductive layer, which is within the through hole and surrounds the filling insulating layer, wherein a portion of the first conductive layer is below the filling insulating layer and at the bottom of the through hole. The via structure further includes a first insulating layer, which is on the sidewalls of the through hole and surrounds the first conductive layer.
Bibliography:Application Number: US201615204281