Word Line Dependent Pass Voltages In Non-Volatile Memory

Sensing in non-volatile memory is performed using bias conditions that are dependent on the position of a selected memory cell within a group of non-volatile memory cells. During sensing, a selected memory cell receives a reference voltage while the remaining memory cells receive a read or verify pa...

Full description

Saved in:
Bibliographic Details
Main Author Costa Xiying
Format Patent
LanguageEnglish
Published 11.01.2018
Subjects
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:Sensing in non-volatile memory is performed using bias conditions that are dependent on the position of a selected memory cell within a group of non-volatile memory cells. During sensing, a selected memory cell receives a reference voltage while the remaining memory cells receive a read or verify pass voltage. For at least a subset of the unselected memory cells, the pass voltage that is applied is dependent upon the position of the selected memory cell in the group. As programming progresses from a memory cell at a first end of a NAND string toward a memory cell at a second end of the NAND string, for example, the pass voltage for at least a subset of the unselected memory cells that have already been subjected to programming may be increased. This technique may reduce the effects of an increased channel resistance that occurs as more memory cells are programmed.
Bibliography:Application Number: US201615204257