FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH DIFFERENT GATE PROFILE AND METHOD FOR FORMING THE SAME

A FinFET device structure is provided. The FinFET device structure includes a fin structure formed over a substrate and an isolation structure formed over the substrate. The FinFET device structure includes a first gate structure and a second gate structure formed over the fin structure. The first g...

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Bibliographic Details
Main Authors YANG Ya-Wen, CHIANG Tsung-Yu, HUANG Yi-Ching
Format Patent
LanguageEnglish
Published 07.12.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A FinFET device structure is provided. The FinFET device structure includes a fin structure formed over a substrate and an isolation structure formed over the substrate. The FinFET device structure includes a first gate structure and a second gate structure formed over the fin structure. The first gate structure has a first top width in a direction that is parallel to the fin structure, the second gate structure has a second top width in a direction that is parallel to the fin structure, and the first top width is greater than the second top width.
Bibliography:Application Number: US201615169980