SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor device according to this embodiment includes a semiconductor layer, a plurality of diffusion layers in the semiconductor layer, a gate insulating film, a gate electrode, first contacts, and second contacts. The gate insulating film is on the semiconductor layer between the plurality...

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Bibliographic Details
Main Authors OMOTO Seiichi, FUKUMAKI Naomi, HATANO Masaaki
Format Patent
LanguageEnglish
Published 07.12.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device according to this embodiment includes a semiconductor layer, a plurality of diffusion layers in the semiconductor layer, a gate insulating film, a gate electrode, first contacts, and second contacts. The gate insulating film is on the semiconductor layer between the plurality of diffusion layers. The gate electrode is on the gate insulating film. The first contacts include silicide layers of the same material which are on the gate electrode and the diffusion layers respectively, and first metal layers on the silicide layers. The second contacts are on the first contacts.
Bibliography:Application Number: US201615262385