METHOD FOR IN-DIE OVERLAY CONTROL USING FEOL DUMMY FILL LAYER

Methods for in-die overlay reticle measurement and the resulting devices are disclosed. Embodiments include providing parallel structures in a first layer on a substrate; determining measurement sites, in a second layer above the first layer, void of active integrated circuit elements; forming overl...

Full description

Saved in:
Bibliographic Details
Main Authors SCHURING Andreas, SCHMIDT Martin, THIERBACH Stefan, RONGEN Stefan, RUHM Matthias, MOLL Peter, FISCHER Daniel, HARTIG Carsten, ÜBERREITER Guido
Format Patent
LanguageEnglish
Published 16.11.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Methods for in-die overlay reticle measurement and the resulting devices are disclosed. Embodiments include providing parallel structures in a first layer on a substrate; determining measurement sites, in a second layer above the first layer, void of active integrated circuit elements; forming overlay trenches, in the measurement sites and parallel to the structures, exposing sections of the structures, wherein each overlay trench is aligned over a structure and over spaces between the structure and adjacent structures; determining a trench center-of-gravity of an overlay trench; determining a structure center-of-gravity of a structure exposed in the overlay trench; and determining an overlay parameter based on a difference between the trench center-of-gravity and the structure center-of-gravity.
Bibliography:Application Number: US201615153936