SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

• Main Authors: LEE Jun Hee, LEE Mi Hee, JANG Mi Na, LEE So Ra
• Format: Patent
• Language: English
• Published: 02.11.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A nitride semiconductor light emitting device may include: a semiconductor layer; an active layer; a second semiconductor layer; mesa regions formed to expose the semiconductor layer; a second electrode formed under the second semiconductor layer; a cover metal layer formed at a corner under the second semiconductor layer to overlap part of the second electrode; an insulating layer formed under the cover metal layer, the second electrode, and the mesa regions and having openings to expose the semiconductor layer; a first electrode disposed in the openings and over a conductive substrate; and a second electrode pad formed over the exposed cover metal layer, wherein when the width a of the second electrode between adjacent mesa regions and the width b of the second electrode between a mesa region at the edge and an extension line of the cover metal layer at the corner have a relation of a>b.