METHOD FOR MANUFACTURING A BIPOLAR JUNCTION TRANSISTOR

The invention discloses a method for manufacturing a bipolar junction type transistor. The method for manufacturing a bipolar junction type transistor comprises steps of providing a conductor substrate of a first conductive type bury layer, performing dopping on the conductor substrate in a collecto...

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Bibliographic Details
Main Authors MANGER Dirk, TEGEN Stefan
Format Patent
LanguageEnglish
Published 02.11.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention discloses a method for manufacturing a bipolar junction type transistor. The method for manufacturing a bipolar junction type transistor comprises steps of providing a conductor substrate of a first conductive type bury layer, performing dopping on the conductor substrate in a collector electrode injection area in order to obtain a surface parallel with the semiconductor substrate and an collector electrode injection which is extended from the surface of the semiconductor substrate to the bury layer, providing a second conductive type base electrode layer on the surface of the semiconductor substrate, wherein the base electrode layer covers the electrode injection, providing a sarcrfice emission electrode layer on the base electrode layer, wherein the sarcrifice
Bibliography:Application Number: US201715452780