MAGNETIC MEMORY DEVICES AND METHODS FOR MANUFACTURING THE SAME

A magnetic memory device may include a free magnetic pattern and a capping pattern on a surface of the free magnetic pattern. The capping pattern may include first and second metal elements. The capping pattern may include a first portion adjacent to an interface between the free magnetic pattern an...

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Bibliographic Details
Main Authors KIM Keewon, PARK Sang Hwan, KIM Kwangseok, JANG Youngman
Format Patent
LanguageEnglish
Published 12.10.2017
Subjects
ELECTRICITY
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Summary:A magnetic memory device may include a free magnetic pattern and a capping pattern on a surface of the free magnetic pattern. The capping pattern may include first and second metal elements. The capping pattern may include a first portion adjacent to an interface between the free magnetic pattern and the capping pattern, and a second portion spaced apart from the interface. The first metal element may have a concentration greater in the first portion than in the second portion. The first metal element may have an atomic weight smaller than that of the second metal element. The concentration of the first metal element along the thickness direction of the capping pattern may be proportional to a proximity to the interface.
Bibliography:Application Number: US201715454210