INTEGRATION OF NOMINAL GATE WIDTH FINFETS AND DEVICES HAVING LARGER GATE WIDTH

A starting semiconductor structure includes a layer of filler material (e.g., amorphous silicon), a hard mask layer over the layer of filler material, and filler material lines over the hard mask layer. A protective layer is formed over one or more, but less than all of the filler material lines, at...

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Bibliographic Details
Main Author PEDDETI Shivaji
Format Patent
LanguageEnglish
Published 12.10.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A starting semiconductor structure includes a layer of filler material (e.g., amorphous silicon), a hard mask layer over the layer of filler material, and filler material lines over the hard mask layer. A protective layer is formed over one or more, but less than all of the filler material lines, at least one protected filler material line and at least one unprotected filler material line have a same width, and, after forming the protective layer, oxidizing unprotected filler material lines, such that the oxidized unprotected line(s) have a larger width than the protected filler material line(s).
Bibliography:Application Number: US201615093272