TRANSISTOR AND IMAGE SENSOR HAVING THE SAME

An image sensor includes: a light receiving section suitable for generating photocharges in response to incident light; and a driving section including a source follower transistor suitable for generating an output voltage corresponding to a reference voltage in response to the photocharges. The sou...

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Bibliographic Details
Main Authors NA Min-Ki, WOO Dong-Hyun, LEE Ho-Ryeong, KWAG Pyong-Su
Format Patent
LanguageEnglish
Published 28.09.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An image sensor includes: a light receiving section suitable for generating photocharges in response to incident light; and a driving section including a source follower transistor suitable for generating an output voltage corresponding to a reference voltage in response to the photocharges. The source follower transistor includes: a stack structure formed by sequentially stacking a first conductive layer, an insulating layer and a second conductive layer; an open portion to formed through the second conductive layer and the insulating layer so as to expose the first conductive layer; a channel layer formed along the surface of the open portion so as to be connected to the first conductive layer and the second conductive layer; and a gate is connected to the light receiving section and which is formed over the channel layer so as to overlap the second conductive layer.
Bibliography:Application Number: US201615192816