METHOD OF TUNING SOURCE/DRAIN PROXIMITY FOR INPUT/OUTPUT DEVICE RELIABILITY ENHANCEMENT

A semiconductor device includes a first FinFET device and a second FinFET device. The first FinFET device includes a first gate, a first source, and a first drain. The first FinFET device has a first source/drain proximity. The second FinFET device includes a second gate, a second source, and a seco...

Full description

Saved in:
Bibliographic Details
Main Authors Leung Ying-Keung, Wang Chih-Hao, Ching Kuo-Cheng, Tsai Ching-Wei
Format Patent
LanguageEnglish
Published 28.09.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor device includes a first FinFET device and a second FinFET device. The first FinFET device includes a first gate, a first source, and a first drain. The first FinFET device has a first source/drain proximity. The second FinFET device includes a second gate, a second source, and a second drain. The second FinFET device has a second source/drain proximity that is smaller than the first source/drain proximity. In some embodiments, \the first FinFET device is an Input/Output (I/O) device, and the second FinFET device is a non-I/O device such as a core device. In some embodiments, the greater source/drain proximity of the first FinFET device is due to an extra spacer of the first FinFET device that does not exist for the second FinFET device.
Bibliography:Application Number: US201715622648