SWITCHING CIRCUIT
A switching circuit disclosed, herein, includes a main MOSFET 12, a control MOSFET 14, and a diode 16. The main MOSFET is formed in a SiC semiconductor layer. A channel type of the main MOSFET is a first conductivity type. A channel type of the control MOSFET is a second conductivity type. A source...
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| Main Authors | , , |
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| Format | Patent |
| Language | English |
| Published |
14.09.2017
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A switching circuit disclosed, herein, includes a main MOSFET 12, a control MOSFET 14, and a diode 16. The main MOSFET is formed in a SiC semiconductor layer. A channel type of the main MOSFET is a first conductivity type. A channel type of the control MOSFET is a second conductivity type. A source of the control MOSFET is connected to-a gate of the main MOS-FET. A cathode of the diode is connected to a gate of one of the main MOSFET and the control MOSFET. An anode of the diode is connected to a gate of the other of the main MOSFET and the control MOSFET. A channel type of the one is an n-type. A channel type of the other is a p-type. |
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| AbstractList | A switching circuit disclosed, herein, includes a main MOSFET 12, a control MOSFET 14, and a diode 16. The main MOSFET is formed in a SiC semiconductor layer. A channel type of the main MOSFET is a first conductivity type. A channel type of the control MOSFET is a second conductivity type. A source of the control MOSFET is connected to-a gate of the main MOS-FET. A cathode of the diode is connected to a gate of one of the main MOSFET and the control MOSFET. An anode of the diode is connected to a gate of the other of the main MOSFET and the control MOSFET. A channel type of the one is an n-type. A channel type of the other is a p-type. |
| Author | YAMAMOTO Kensaku SUGIMOTO Masahiro WATANABE Yukihiko |
| Author_xml | – fullname: WATANABE Yukihiko – fullname: SUGIMOTO Masahiro – fullname: YAMAMOTO Kensaku |
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| Notes | Application Number: US201515508219 |
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| RelatedCompanies | TOYOTA JIDOSHA KABUSHIKI KAISHA |
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| Snippet | A switching circuit disclosed, herein, includes a main MOSFET 12, a control MOSFET 14, and a diode 16. The main MOSFET is formed in a SiC semiconductor layer.... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PULSE TECHNIQUE SEMICONDUCTOR DEVICES |
| Title | SWITCHING CIRCUIT |
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