SWITCHING CIRCUIT

A switching circuit disclosed, herein, includes a main MOSFET 12, a control MOSFET 14, and a diode 16. The main MOSFET is formed in a SiC semiconductor layer. A channel type of the main MOSFET is a first conductivity type. A channel type of the control MOSFET is a second conductivity type. A source...

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Bibliographic Details
Main Authors WATANABE Yukihiko, SUGIMOTO Masahiro, YAMAMOTO Kensaku
Format Patent
LanguageEnglish
Published 14.09.2017
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Summary:A switching circuit disclosed, herein, includes a main MOSFET 12, a control MOSFET 14, and a diode 16. The main MOSFET is formed in a SiC semiconductor layer. A channel type of the main MOSFET is a first conductivity type. A channel type of the control MOSFET is a second conductivity type. A source of the control MOSFET is connected to-a gate of the main MOS-FET. A cathode of the diode is connected to a gate of one of the main MOSFET and the control MOSFET. An anode of the diode is connected to a gate of the other of the main MOSFET and the control MOSFET. A channel type of the one is an n-type. A channel type of the other is a p-type.
Bibliography:Application Number: US201515508219