IN SITU GROWN SiC COATINGS ON CARBON MATERIALS
A method of forming a γ-SiC material or coating by mixing SiO2 with carbon and heating the mixture in vacuum wherein the carbon is oxidized to CO gas and reduces the SiO2 to SiO gas and reacting a carbon material with the SiO gas at a temperature in the range of 1300 to 1600° C. resulting in a SiC m...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
14.09.2017
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Subjects | |
Online Access | Get full text |
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