IN SITU GROWN SiC COATINGS ON CARBON MATERIALS

A method of forming a γ-SiC material or coating by mixing SiO2 with carbon and heating the mixture in vacuum wherein the carbon is oxidized to CO gas and reduces the SiO2 to SiO gas and reacting a carbon material with the SiO gas at a temperature in the range of 1300 to 1600° C. resulting in a SiC m...

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Bibliographic Details
Main Authors Villalobos Guillermo R, Sanghera Jasbinder S, Hunt Michael, Sadowski Bryan, Aggarwal Ishwar D
Format Patent
LanguageEnglish
Published 14.09.2017
Subjects
ARTIFICIAL STONE
CEMENTS
CERAMICS
CHEMISTRY
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
COMPOUNDS THEREOF
CONCRETE
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
INORGANIC CHEMISTRY
LIME, MAGNESIA
METALLURGY
NON-METALLIC ELEMENTS
REFRACTORIES
SLAG
TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TREATMENT OF NATURAL STONE
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Summary:A method of forming a γ-SiC material or coating by mixing SiO2 with carbon and heating the mixture in vacuum wherein the carbon is oxidized to CO gas and reduces the SiO2 to SiO gas and reacting a carbon material with the SiO gas at a temperature in the range of 1300 to 1600° C. resulting in a SiC material or a SiC coating on a substrate. Also disclosed is the related SiC material or coating prepared by this method.
Bibliography:Application Number: US201715606110