SEMICONDUCTOR DEVICES HAVING THROUGH ELECTRODES AND METHODS FOR FABRICATING THE SAME

The semiconductor device includes a substrate including an integrated circuit and a contact that are electrically connected to each other, an insulation layer covering the substrate and including metal lines, and a through electrode electrically connected to the integrated circuit. The insulation la...

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Bibliographic Details
Main Authors PARK Dong-Sik, HAN Jung-Hoon, Kim Dong-Wan
Format Patent
LanguageEnglish
Published 07.09.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The semiconductor device includes a substrate including an integrated circuit and a contact that are electrically connected to each other, an insulation layer covering the substrate and including metal lines, and a through electrode electrically connected to the integrated circuit. The insulation layer includes an interlayer dielectric layer on the substrate and an intermetal dielectric layer on the interlayer dielectric layer. The metal lines include a first metal line in the interlayer dielectric layer and electrically connected to the contact, and a plurality of second metal lines in the intermetal dielectric layer and electrically connected to the first metal line and the through electrode. The through electrode includes a top surface higher than a top surface of the contact.
Bibliography:Application Number: US201715443259