SEMICONDUCTOR ON INSULATOR STRUCTURE COMPRISING A SACRIFICIAL LAYER AND METHOD OF MANUFACTURE THEREOF
A method is provided for preparing a semiconductor-on-insulator structure comprising a sacrificial layer.
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Main Author | |
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Format | Patent |
Language | English |
Published |
07.09.2017
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Subjects | |
Online Access | Get full text |
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Summary: | A method is provided for preparing a semiconductor-on-insulator structure comprising a sacrificial layer. |
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Bibliography: | Application Number: US201715450124 |