SEMICONDUCTOR ON INSULATOR STRUCTURE COMPRISING A SACRIFICIAL LAYER AND METHOD OF MANUFACTURE THEREOF

A method is provided for preparing a semiconductor-on-insulator structure comprising a sacrificial layer.

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Bibliographic Details
Main Author Kweskin Sasha Joseph
Format Patent
LanguageEnglish
Published 07.09.2017
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Summary:A method is provided for preparing a semiconductor-on-insulator structure comprising a sacrificial layer.
Bibliography:Application Number: US201715450124